20 disponibles
$2,25
(Incluye IVA)
20 disponibles
F530NS MOSFET
- Type Designator: IRF530NS
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 79 W
- Maximum Drain-Source Voltage |Vds|: 100 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 17 A
- Maximum Junction Temperature (Tj): 150 °C
- Total Gate Charge (Qg): 24.7 nC
- Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm
